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Personal Information
College Photo Name Duesberg, Georg Stefan
Main Department Chemistry
College Title Professor
College Tel +353 1 896 3035
Prof Georg Duesberg graduated in Physical Chemistry from the University of Kassel, Germany. He worked at the Max-Planck-Institute Stuttgart and Trinity College Dublin from 1997–2001 on a collaborative European project, were he dealt with purifying, assembling and imaging carbon nanotubes. He was the first person to characterise individual carbon nanotubes by Raman spectroscopy. He received his PhD from the University of Tuebingen, Germany in 2000. From 2001–2005 he worked at the Infineon AG, Corporate Research Department, Munich, Germany. Here his research was focused on the integration of bottom-up structures grown into CMOS based devices. Wafer scale CVD as well as the growth of individual nanotubes from lithographically defined nano-holes are among his achievements. From 2005–2007 Prof Duesberg worked in the Thin Films Department of the Qimonda AG, Dresden, Germany on the implementation of new carbon nanostructured films into future DRAM technology. In July 2007 he moved to Dublin to take on a position as a Principal Investigator in CRANN and Associate Professor in the School of Chemistry, Trinity College Dublin. He is a recognised world leader in the area of the integration of carbon nanotubes into CMOS technology.
Details Date
SELECTED PUBLICATIONS Low Temperature Graphene Growth S. Kumar, N. McEvoy, T. Lutz, G. P. Keeley, N. Whitesidea, W. Blau and G. S. Duesberg, ECS Transactions, 19 (5) 175-181 (2009) Hernandez, Y., V. Nicolosi, et al. (2008). "High-yield production of graphene by liquid-phase exfoliation of graphite." Nature Nanotechnology 3(9): 563-568. Sub-20 nm short channel carbon nanotube transistors R.V. Seidel, A.P. Graham, J. Kretz, B. Rajasekharan, G.S. Duesberg, M. Liebau, E. Unger, F. Kreupl, W. Hoenlein, Nano Letters, 5, 147–150 (2005). Raman modes of index-identified free-standing single-walled carbon nanotubes J.C. Meyer, M. Paillet, T. Michel, G.S. Duesberg, S. Roth, J.L. Sauvajol, Physical Review Letters, 95, 217401 (2005). Polarized Raman spectroscopy on isolated single-wall carbon nanotubes G.S. Duesberg, I. Loa, M. Burghard, K. Syassen, S. Roth, Physical Review Letters, 85, 5436–5439 (2000).
Membership of Professional Institutions, Associations, Societies
Details Date From Date To
Electrochemical Soceity (ECS) Oct 2007
Awards and Honours
Award Date
ETS Walton Award 2007
Research Interests
Biodegradation Biological Polymers Biological Sciences Carbon Dioxide Reduction
Carbon nanostructures Catalysis Chromatography Composite Materials
Composite materials Electrochemistry Electron Microscopy Electronic Devices
Electronic Materials Fullerenes Magnetic Materials Materials Sciences
Multi-layer Composites Nanochemistry Nanotechnology Nanotubes
New materials, supramolecular structures Packaging Sciences Petroleum Chemistry Physical Chemistry
Polymer Science Semiconductor physics and technologies Semiconductors Small Structures
Solid State Physics Solid/Liquid Interfaces Surface Chemistry Surface chemistry
Vacuum Science
Research Projects
Project title CSET: : Integrated Nanoscale Devices
Summary The grand mission for Theme 2 in CSET is to develop innovative science for the delivery of new sub 10 nm device technologies into industry. In order to achieve this goal we have developed a series of inter-related collaborative strands that reflect the grand challenges of ICT. This centres on how nanodevice structures and in particular small arrays of around ten of these might be positioned on a substrate and contacts made for their individual e-characterisation. The aim here is to develop self-organised multi-level structures (consisting of active device layers, interconnects, gates and circuitry) that might function as logic circuitry and which address requirement of bottom-up technologies in terms of device feature size, scalability and density.
Funding Agency SFI
Programme CSET
Type of Project 2008 - 2013
Date from Oct 2008
Date to Sep 2013
Person Months 2

Project title Nano EI
Summary The objective of this project would be to demonstrate interconnect technologies at the 11nm node. It will focus on the metallisation challenges and be composed of two main themes; 1. The first theme will look at scaling of the existing Cu technology which will require innovations for seed layers, barrier layers, conformal Cu deposition and capping. The target dimensions will be for 20 nm trenches and 15nm vias with 2:1 aspect ratios at the ‘11nm node’, with initial work starting at the 22nm node with 40nm trenches and 30nm vias. Parameters to be considered will include resistivity, contact resistances, electromigration performance and mechanical stress. 2. The second theme will look at alternative 1d technologies such as CNT synthesis for via and trench. It will be shown that these new materials/methods offer viable alternatives to meeting the demanding challenges at this level of scaling. Demonstrator arrays will be produced so that the performance of the materials can be assessed by the industrial partner in a ‘real’ environment and the performance of the methods in the two themes can be compared against state-of-the-art structures in Cu. The project will consider scale-up, ongoing from demonstrator single layers through to multiple layer connected structures. Although patterning will not be a focus topic of this work, some considerable patterning and integration work will need to be performed so that structures with the required dimensions can be made available.
Funding Agency EI
Programme Competence Centre
Type of Project Collaborative
Date from 1st July 2009
Date to 30 June 2010
Person Months 1

Project title CRANN-HP collaborative research project on development of flexible, transparent conducting films and devices from nano-materials
Summary This proposed research programme builds on a successful existing three year collaboration where the partnership of CRANN with Hewlett-Packard (HP) has resulted in the development of flexible, transparent and conductive thin films of both carbon nanotube mats and polymer / carbon nanotube composites which now represent the international the state-of-the-art1.
Funding Agency SFI
Type of Project Colloraborative
Date from 1st Jan 2010
Date to 31 Dec 2012
Person Months 2

Publications and Other Research Outputs
Peer Reviewed
Kumar, S, McEvoy, N, Lutz, T, Keeley, GP, Nicolosi, V, Murray, CP, Blau, WJ, Duesberg, GS, Gas phase controlled deposition of high quality large-area graphene films, CHEMICAL COMMUNICATIONS, 46, 2010
De, S, King, PJ, Lotya, M, O'Neill, A, Doherty, EM, Hernandez, Y, Duesberg, GS, Coleman, JN, Flexible, Transparent, Conducting Films of Randomly Stacked Graphene from Surfactant-Stabilized, Oxide-Free Graphene Dispersions, Small, 6, (3), 2010, p458-464
TARA - Full Text
Woo, Y, Duesberg, GS, Roth, S, Reduced contact resistance between an individual single-walled carbon nanotube and a metal electrode by a local point annealing, NANOTECHNOLOGY, 18, 2007
Weber, WM, Geelhaar, L, Graham, AP, Unger, E, Duesberg, GS, Liebau, M, Pamler, W, Cheze, C, Riechert, H, Lugli, P, Kreupl, F, Silicon-nanowire transistors with intruded nickel-silicide contacts, NANO LETTERS, 6, 2006
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Last Updated:19-APR-2014