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Professor Georg Duesberg

Professor (Chemistry)

Professor (CRANN)

Prof Georg Duesberg graduated in Physical Chemistry from the University of Kassel, Germany. He worked at the Max-Planck-Institute Stuttgart and Trinity College Dublin from 1997-2001 on a collaborative European project, were he dealt with purifying, assembling and imaging carbon nanotubes. He was the first person to characterise individual carbon nanotubes by Raman spectroscopy. He received his PhD from the University of Tuebingen, Germany in 2000. From 2001-2005 he worked at the Infineon AG, Corporate Research Department, Munich, Germany. Here his research was focused on the integration of bottom-up structures grown into CMOS based devices. Wafer scale CVD as well as the growth of individual nanotubes from lithographically defined nano-holes are among his achievements. From 2005-2007 Prof Duesberg worked in the Thin Films Department of the Qimonda AG, Dresden, Germany on the implementation of new carbon nanostructured films into future DRAM technology. In July 2007 he moved to Dublin to take on a position as a Principal Investigator in CRANN and Associate Professor in the School of Chemistry, Trinity College Dublin. He is a recognised world leader in the area of the integration of carbon nanotubes into CMOS technology.
  Biodegradation   Biological Polymers   Biological Sciences   Carbon Dioxide Reduction   Carbon nanostructures   Catalysis   Chromatography   Composite materials   Electrochemistry   Electron Microscopy   Electronic Devices   Electronic Materials   Fullerenes   Magnetic Materials   Materials Sciences   Multi-layer Composites   Nanochemistry   Nanotechnology   Nanotubes   New materials, supramolecular structures   Packaging Sciences   Petroleum Chemistry   Physical Chemistry   Polymer Science   Semiconductor physics and technologies   Semiconductors   Small Structures   Solid State Physics   Solid/Liquid Interfaces   Surface chemistry   Vacuum Science
 CSET: : Integrated Nanoscale Devices
 Nano EI
 CRANN-HP collaborative research project on development of flexible, transparent conducting films and devices from nano-materials

Details Date
SELECTED PUBLICATIONS Low Temperature Graphene Growth S. Kumar, N. McEvoy, T. Lutz, G. P. Keeley, N. Whitesidea, W. Blau and G. S. Duesberg, ECS Transactions, 19 (5) 175-181 (2009) Hernandez, Y., V. Nicolosi, et al. (2008). "High-yield production of graphene by liquid-phase exfoliation of graphite." Nature Nanotechnology 3(9): 563-568. Sub-20 nm short channel carbon nanotube transistors R.V. Seidel, A.P. Graham, J. Kretz, B. Rajasekharan, G.S. Duesberg, M. Liebau, E. Unger, F. Kreupl, W. Hoenlein, Nano Letters, 5, 147-150 (2005). Raman modes of index-identified free-standing single-walled carbon nanotubes J.C. Meyer, M. Paillet, T. Michel, G.S. Duesberg, S. Roth, J.L. Sauvajol, Physical Review Letters, 95, 217401 (2005). Polarized Raman spectroscopy on isolated single-wall carbon nanotubes G.S. Duesberg, I. Loa, M. Burghard, K. Syassen, S. Roth, Physical Review Letters, 85, 5436-5439 (2000).
Details Date From Date To
Electrochemical Soceity (ECS) Oct 2007
Aydin,O. I. O.I., Hallam,Toby D. T.D., Thomassin,Jean Luc J.L., Mouis,Mireille M., Duesberg,Georg Stefan G.S., Interface and strain effects on the fabrication of suspended CVD graphene devices, Solid-State Electronics, 2015, Journal Article, PUBLISHED  DOI
Authors of Document Backes, C., Berner, N.C., Chen, X., (...), Coleman, J.N., Mcdonald, A.R. , Functionalization of Liquid-Exfoliated Two-Dimensional 2H-MoS2, Angewandte Chemie - International Edition, 2015, Journal Article, IN_PRESS  DOI
Aydin, O.I., Mouis, M., Cresti, A., (...), Thomassin, J.L., Duesberg, G.S. , Low temperature characterization of CVD graphene , Proceedings - 11th International Workshop on Low Temperature Electronics, WOLTE 2014, 11th International Workshop on Low Temperature Electronics, WOLTE 2014, Grenoble; France, 7-9 July, 6881033, 2014, pp, pp. 89-92 , Conference Paper, PUBLISHED  DOI
McCloskey, D., Fox, D., O'Hara, N., (...), Zhang, H.Z., Donegan, J.F., Helium ion microscope generated nitrogen-vacancy centres in type Ib diamond, Optics InfoBase Conference Papers , CLEO: Science and Innovations, San Jose, CA; United States, 8-13 June, OSA, 2014, pp106736-, Conference Paper, PUBLISHED
Aydin, O.I. , Hallam, T., Thomassin, J.L., Mouis, M., Duesberg, G, Challenges in suspending CVD graphene: More than capillary effects , Proceeeings - 15th International Conference on Ultimate Integration on Silicon, ULIS 2014, 15th International Conference on Ultimate Integration on Silicon, ULIS 2014, Stockholm; Sweden, 7-9 April, 2014, pp33-36 , Notes: [Article number 6813899], Conference Paper, PUBLISHED  DOI
Matthew T. Cole, William I. Milne, Chi Li, Wei Lei, Boaping Wang, Toby Hallam, Georg S. Duesberg, Field Emission Applications of Graphene, Technical Digest, 27th International Vacuum Nanoelectronics Conference, Engelberg, Switzerland, 6-10 July, 2014, pp228 - 229 -, Conference Paper, PUBLISHED  DOI
Sarah Hurch, Hugo Nolan, Toby Hallam, Nina C.Berner, Niall McEvoy, Georg S. Duesberg,, Inkjet-defined field-effect transistors from chemical vapour deposited graphene, Carbon, 71, 2014, p332-337 , Journal Article, PUBLISHED  TARA - Full Text  DOI
Hanlon, D, Backes, C, Higgins, TM, Hughes, M, O'Neill, A, King, P, McEvoy, N, Duesberg, GS, Sanchez, BM, Pettersson, H, Nicolosi, V, Coleman, JN, Production of Molybdenum Trioxide Nanosheets by Liquid Exfoliation and Their Application in High-Performance Supercapacitors, CHEMISTRY OF MATERIALS, 26, (4), 2014, p1751-1763 , Journal Article, PUBLISHED  TARA - Full Text  DOI
Gatensby, Riley McEvoy, Niall Lee, Kangho Hallam, Toby Berner, Nina C. Rezvani, Ehsan Winters, SinĂ©ad O'Brien, Maria Duesberg, Georg S., Controlled synthesis of transition metal dichalcogenide thin films for electronic applications, Applied Surface Science, 297, 2014, p139-146 , Journal Article, PUBLISHED  TARA - Full Text  DOI
D. McCloskey, D. Fox, N. O'Hara, V. Usov, D. Scanlan, N. McEvoy, G. S. Duesberg, G. L. W. Cross, H. Z. Zhang and J. F. Donegan, Helium ion microscope generated nitrogen-vacancy centres in type Ib diamond, Applied Physics Letters, 104, 2014, p031109-, Journal Article, PUBLISHED  TARA - Full Text  DOI

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Award Date
ETS Walton Award 2007
Qimonda Innovation Award Jan 2008